DMN4026SK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

21.3nC @ 10V

Terminal Position :

Single

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

40V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

28A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.6W Ta

Number of Terminations :

2

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

24m Ω @ 6A, 10V

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Published :

2015

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.024Ohm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1181pF @ 20V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63