DMN4010LFG-7
- Mfr.Part #
- DMN4010LFG-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 11.5A PWRDI3333
- Stock
- 28,303
- In Stock :
- 28,303
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 930mW Ta
- Element Configuration :
- Single
- Weight :
- 72.007789mg
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 40V
- Package / Case :
- 8-PowerVDFN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 14A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1810pF @ 20V
- Vgs (Max) :
- ±20V
- Base Part Number :
- DMN4010
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 11.5A
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2015
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Capacitance :
- 1.81nF
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 23 Weeks
- Datasheets
- DMN4010LFG-7

N-Channel Tape & Reel (TR) 12m Ω @ 14A, 10V ±20V 1810pF @ 20V 37nC @ 10V 8-PowerVDFN
DMN4010LFG-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1810pF @ 20V.This device conducts a continuous drain current (ID) of 11.5A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMN4010LFG-7 Features
a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 40V voltage
DMN4010LFG-7 Applications
There are a lot of Diodes Incorporated
DMN4010LFG-7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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