DMN33D8LDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Drain-source On Resistance-Max :

3Ohm

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101

Drain to Source Voltage (Vdss) :

30V

Published :

2014

Mount :

Surface Mount

Continuous Drain Current (ID) :

250mA

Power - Max :

350mW

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.23nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.25A

Package / Case :

6-TSSOP, SC-88, SOT-363

Input Capacitance (Ciss) (Max) @ Vds :

48pF @ 5V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

350mW

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Number of Elements :

2

DS Breakdown Voltage-Min :

30V

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

JESD-30 Code :

R-PDSO-G6