DMN3190LDW-7
- Mfr.Part #
- DMN3190LDW-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 1A SOT363
- Stock
- 331,993
- In Stock :
- 331,993
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 1.3A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 6
- Number of Terminations :
- 6
- Width :
- 1.35mm
- Element Configuration :
- Dual
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- FET Type :
- 2 N-Channel (Dual)
- DS Breakdown Voltage-Min :
- 30V
- Max Power Dissipation :
- 320mW
- Drain-source On Resistance-Max :
- 0.19Ohm
- Fall Time (Typ) :
- 15.6 ns
- Reference Standard :
- AEC-Q101
- Continuous Drain Current (ID) :
- 1A
- JESD-609 Code :
- e3
- Weight :
- 6.010099mg
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 30.3 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 2nC @ 10V
- Published :
- 2013
- Drain Current-Max (Abs) (ID) :
- 1A
- Number of Elements :
- 2
- FET Feature :
- Logic Level Gate
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 8.9ns
- Height :
- 1mm
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 87pF @ 20V
- Number of Channels :
- 2
- Turn On Delay Time :
- 4.5 ns
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Length :
- 2.2mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Datasheets
- DMN3190LDW-7

DMN3190LDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at
The DMN3190LDW-7 is a MOSFET 2N-CH 30V 1A SOT363 from Diodes Inc. It is a low-voltage, low-power, single-channel MOSFET with a maximum drain-source voltage of 30V and a maximum drain current of 1A. It is designed for use in a wide range of applications, including power management, motor control, and signal switching.
Features:
• Low-voltage, low-power, single-channel MOSFET
• Maximum drain-source voltage of 30V
• Maximum drain current of 1A
• Low on-resistance
• Low gate charge
• High-speed switching
• RoHS compliant
Applications:
The DMN3190LDW-7 is suitable for use in a wide range of applications, including:
• Power management
• Motor control
• Signal switching
• Automotive
• Industrial
• Consumer electronics
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