DMN3190LDW-7

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Mfr.Part #
DMN3190LDW-7
Manufacturer
Diodes Incorporated
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET 2N-CH 30V 1A SOT363
Stock
331,993
In Stock :
331,993

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Arrays
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
190m Ω @ 1.3A, 10V
Peak Reflow Temperature (Cel) :
260
Pin Count :
6
Number of Terminations :
6
Width :
1.35mm
Element Configuration :
Dual
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
FET Type :
2 N-Channel (Dual)
DS Breakdown Voltage-Min :
30V
Max Power Dissipation :
320mW
Drain-source On Resistance-Max :
0.19Ohm
Fall Time (Typ) :
15.6 ns
Reference Standard :
AEC-Q101
Continuous Drain Current (ID) :
1A
JESD-609 Code :
e3
Weight :
6.010099mg
RoHS Status :
ROHS3 Compliant
Additional Feature :
High Reliability
Terminal Form :
Gull wing
Number of Pins :
6
Vgs(th) (Max) @ Id :
2.8V @ 250μA
Mounting Type :
Surface Mount
Turn-Off Delay Time :
30.3 ns
Gate Charge (Qg) (Max) @ Vgs :
2nC @ 10V
Published :
2013
Drain Current-Max (Abs) (ID) :
1A
Number of Elements :
2
FET Feature :
Logic Level Gate
Terminal Finish :
Matte Tin (Sn)
Rise Time :
8.9ns
Height :
1mm
Drain to Source Voltage (Vdss) :
30V
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
87pF @ 20V
Number of Channels :
2
Turn On Delay Time :
4.5 ns
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
15 Weeks
Radiation Hardening :
No
Length :
2.2mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Package / Case :
6-TSSOP, SC-88, SOT-363
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Datasheets
DMN3190LDW-7
Introducing Transistors - FETs, MOSFETs - Arrays Diodes Incorporated DMN3190LDW-7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Pins:6, Mounting Type:Surface Mount, Number of Channels:2, Operating Temperature:-55°C~150°C TJ, Package / Case:6-TSSOP, SC-88, SOT-363, DMN3190LDW-7 pinout, DMN3190LDW-7 datasheet PDF, DMN3190LDW-7 amp .Beyond Transistors - FETs, MOSFETs - Arrays Diodes Incorporated DMN3190LDW-7 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN3190LDW-7


DMN3190LDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at

Description:

The DMN3190LDW-7 is a MOSFET 2N-CH 30V 1A SOT363 from Diodes Inc. It is a low-voltage, low-power, single-channel MOSFET with a maximum drain-source voltage of 30V and a maximum drain current of 1A. It is designed for use in a wide range of applications, including power management, motor control, and signal switching.

Features:

• Low-voltage, low-power, single-channel MOSFET
• Maximum drain-source voltage of 30V
• Maximum drain current of 1A
• Low on-resistance
• Low gate charge
• High-speed switching
• RoHS compliant

Applications:

The DMN3190LDW-7 is suitable for use in a wide range of applications, including:
• Power management
• Motor control
• Signal switching
• Automotive
• Industrial
• Consumer electronics
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