DMG204010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

7V

Operating Temperature :

150°C TJ

Transition Frequency :

150MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

100μA

Element Configuration :

Dual

hFE Min :

210

ECCN Code :

EAR99

Length :

2.9mm

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

REACH SVHC :

Unknown

Collector Base Voltage (VCBO) :

60V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

Transistor Type :

NPN, PNP

Width :

1.5mm

Mount :

Surface Mount

Package / Case :

SOT-23-6

Gain Bandwidth Product :

150MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN, PNP

Contact Plating :

Tin

Max Collector Current :

100mA

Height :

1.1mm

Published :

2010

Base Part Number :

DMG20401

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Transistor Application :

AMPLIFIER

Number of Pins :

6

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

Power - Max :

300mW

Max Power Dissipation :

300mW