DMG204010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

10 Weeks

Polarity :

NPN, PNP

Transistor Type :

NPN, PNP

Emitter Base Voltage (VEBO) :

7V

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Max Collector Current :

100mA

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

Transition Frequency :

150MHz

Base Part Number :

DMG20401

Number of Elements :

2

Contact Plating :

Tin

Element Configuration :

Dual

Published :

2010

RoHS Status :

RoHS Compliant

Number of Terminations :

6

Transistor Element Material :

SILICON

hFE Min :

210

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Length :

2.9mm

Power - Max :

300mW

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

150MHz

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100μA

Number of Pins :

6

Height :

1.1mm

Max Breakdown Voltage :

50V

Package / Case :

SOT-23-6

Width :

1.5mm

Collector Base Voltage (VCBO) :

60V