DMA201010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Gain Bandwidth Product :

150MHz

Power - Max :

300mW

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Base Part Number :

DMA20101

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100μA

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

hFE Min :

210

Published :

2010

Polarity :

PNP

Number of Terminations :

5

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

JESD-609 Code :

e6

Operating Temperature :

150°C TJ

Number of Elements :

2

Transistor Type :

2 PNP (Dual)

Package / Case :

SC-74A, SOT-753

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

500mV

Emitter Base Voltage (VEBO) :

-7V

Reach Compliance Code :

Unknown

Max Power Dissipation :

300mW

Number of Pins :

5

Transition Frequency :

150MHz

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

JEDEC-95 Code :

MO-178AA

Length :

2.9mm

Factory Lead Time :

10 Weeks

Height :

1.1mm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-500mV

Width :

1.5mm

Terminal Form :

Gull wing