DDTD113EC-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Resistor - Emitter Base (R2) :

1 k Ω

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Width :

1.4mm

Pbfree Code :

yes

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

200MHz

Min Operating Temperature :

-55°C

Weight :

7.994566mg

Max Collector Current :

500mA

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transition Frequency :

200MHz

Base Part Number :

DTD113

Max Power Dissipation :

200mW

Transistor Type :

NPN - Pre-Biased

hFE Min :

33

Element Configuration :

Single

Terminal Position :

Dual

Factory Lead Time :

19 Weeks

Length :

3.05mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

HTS Code :

8541.21.00.75

Continuous Collector Current :

500mA

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Polarity :

NPN

Height :

1mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Published :

2009

Collector Emitter Voltage (VCEO) :

300mV

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Resistor - Base (R1) :

1 k Ω