DDC122TH-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Base Part Number :

DDC122

Transistor Element Material :

SILICON

Additional Feature :

BUILT IN BIAS RESISTOR

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Mount :

Surface Mount

Resistor - Base (R1) :

220 Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Pins :

6

Weight :

3.005049mg

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

Length :

1.6mm

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

JESD-609 Code :

e3

Radiation Hardening :

No

Max Collector Current :

100mA

Max Power Dissipation :

150mW

Collector Emitter Voltage (VCEO) :

40V

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Pin Count :

6

ECCN Code :

EAR99

Published :

2007

Transition Frequency :

200MHz

Height :

600μm

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

200MHz

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Terminal Form :

Flat

Factory Lead Time :

19 Weeks

hFE Min :

100

Width :

1.2mm