DDC122LH-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

HTS Code :

8541.21.00.75

Resistor - Emitter Base (R2) :

10k Ω

Transition Frequency :

200MHz

Published :

2007

Width :

1.2mm

Length :

1.6mm

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 45.45

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Pin Count :

6

Factory Lead Time :

19 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 10mA 5V

Resistor - Base (R1) :

220 Ω

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

DDC122

Continuous Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Polarity :

NPN

Weight :

3.005049mg

hFE Min :

56

Number of Elements :

2

Max Collector Current :

100mA

Number of Terminations :

6

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Pbfree Code :

yes

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Height :

600μm

Current - Collector Cutoff (Max) :

500nA

Frequency - Transition :

200MHz

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat