DDB6U134N16RRBOSA1

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Mfr.Part #
DDB6U134N16RRBOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1600V 70A 500W
Stock
44,882
In Stock :
44,882

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Vce(on) (Max) @ Vge, Ic :
2.75V @ 15V, 70A
Transistor Element Material :
SILICON
Factory Lead Time :
16 Weeks
Lead Free :
Contains Lead
Pin Count :
19
Surface Mount :
No
Input :
Standard
Case Connection :
Isolated
Input Capacitance (Cies) @ Vce :
5.1nF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
500μA
Transistor Application :
POWER CONTROL
Terminal Position :
UPPER
Max Repetitive Reverse Voltage (Vrrm) :
1.6kV
Configuration :
Single
Current - Collector (Ic) (Max) :
70A
Terminal Form :
UNSPECIFIED
Number of Terminations :
19
Halogen Free :
Not Halogen Free
RoHS Status :
ROHS3 Compliant
Mounting Type :
Chassis Mount
Published :
2000
Pbfree Code :
No
Polarity/Channel Type :
N-Channel
Operating Temperature :
150°C TJ
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
500W
Forward Current :
35A
ECCN Code :
EAR99
Number of Elements :
1
Voltage - Collector Emitter Breakdown (Max) :
1600V
Package / Case :
Module
NTC Thermistor :
yes
JESD-30 Code :
R-XUFM-X19
IGBT Type :
NPT
Introducing Transistors - IGBTs - Modules Infineon Technologies DDB6U134N16RRBOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:19, Mounting Type:Chassis Mount, Operating Temperature:150°C TJ, Package / Case:Module, DDB6U134N16RRBOSA1 pinout, DDB6U134N16RRBOSA1 datasheet PDF, DDB6U134N16RRBOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies DDB6U134N16RRBOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies DDB6U134N16RRBOSA1


DDB6U134N16RRBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

DDB6U134N16RRBOSA1                                    Description

 

This Insulated Gate Bipolar Transistor (IGBT) features a robust and   cost effective Field Stop (FS) Trench construction, and provides   superior performance in demanding switching applications, offering   both low on state voltage and minimal switching loss.

 


DDB6U134N16RRBOSA1                                    Applications

· Industrial Motor Drive

· Uninterruptible Power Supply

· Welding and Cutting Machine

· Switched Mode Power Supply

· Induction Heating

 


DDB6U134N16RRBOSA1                                    Features

 Available in 5-V, 4.85-V, and 3.3-V

Fixed-Output and Adjustable Versions

 Very Low-Dropout Voltage ...Maximum of

32 mV at IO = 100 mA (TPS71H50)

 Very Low Quiescent Current – Independent

of Load . . . 285 μA Typ

 Extremely Low Sleep-State Current

0.5 μA Max

 2% Tolerance Over Specified Conditions

For Fixed-Output Versions

 



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