D45C11

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Mfr.Part #
D45C11
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 80V 4A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
hFE Min :
20
Contact Plating :
Tin
RoHS Status :
RoHS Compliant
Max Power Dissipation :
60W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 1A
Weight :
1.8g
Collector Emitter Breakdown Voltage :
80V
Pbfree Code :
yes
Element Configuration :
Single
Transistor Application :
SWITCHING
Published :
2013
Power Dissipation :
60W
Package / Case :
TO-220-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
ECCN Code :
EAR99
Transistor Type :
PNP
Transition Frequency :
32MHz
Collector Emitter Voltage (VCEO) :
80V
JESD-609 Code :
e3
Lifecycle Status :
CONSULT SALES OFFICE (Last Updated: 6 days ago)
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
Current - Collector Cutoff (Max) :
10μA
Gain Bandwidth Product :
32MHz
Number of Terminations :
3
Voltage - Rated DC :
-80V
Max Collector Current :
4A
Current Rating :
-4A
Number of Elements :
1
Frequency :
32MHz
Factory Lead Time :
6 Weeks
Mounting Type :
Through Hole
Packaging :
Bulk
Number of Pins :
3
Datasheets
D45C11
Introducing Transistors - Bipolar (BJT) - Single onsemi D45C11 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, D45C11 pinout, D45C11 datasheet PDF, D45C11 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45C11 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45C11


PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Bulk Through Hole

D45C11 Overview


In this device, the DC current gain is 40 @ 200mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 1A.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).32MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

D45C11 Features


the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 500mV @ 50mA, 1A
the current rating of this device is -4A
a transition frequency of 32MHz


D45C11 Applications


There are a lot of ON Semiconductor
D45C11 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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