CMF20120D
- Mfr.Part #
- CMF20120D
- Manufacturer
- Wolfspeed
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 42A TO247-3
- Stock
- 7,652
- In Stock :
- 7,652
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- Manufacturer :
- Wolfspeed
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Z-FET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 1915pF @ 800V
- Rds On Max :
- 110 mΩ
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 40 ns
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Radiation Hardening :
- No
- Power Dissipation :
- 150W
- Operating Temperature :
- -55°C~135°C TJ
- Rds On (Max) @ Id, Vgs :
- 110mOhm @ 20A, 20V
- Continuous Drain Current (ID) :
- 42A
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Threshold Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 1.2kV
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- TO-247-3
- FET Type :
- N-Channel
- Packaging :
- Tube
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Published :
- 2005
- Factory Lead Time :
- 10 Weeks
- Gate to Source Voltage (Vgs) :
- 25V
- Drain to Source Voltage (Vdss) :
- 1200V
- Width :
- 5.21mm
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 80mOhm
- Height :
- 21.1mm
- Fall Time (Typ) :
- 24 ns
- Input Capacitance :
- 1.915nF
- Turn On Delay Time :
- 13 ns
- Nominal Vgs :
- 2.5 V
- REACH SVHC :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 90.8nC @ 20V
- Vgs (Max) :
- +25V, -5V
- Rise Time :
- 38ns
- Max Operating Temperature :
- 135°C
- Length :
- 16.13mm
- Power Dissipation-Max :
- 215W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Datasheets
- CMF20120D
N-Channel Tube 110mOhm @ 20A, 20V +25V, -5V 1915pF @ 800V 90.8nC @ 20V 1200V TO-247-3
CMF20120D Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1915pF @ 800V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 80mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).
CMF20120D Features
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 80mOhm
a threshold voltage of 2.5V
a 1200V drain to source voltage (Vdss)
CMF20120D Applications
There are a lot of Cree/Wolfspeed
CMF20120D applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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