BUZ73HXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

28A

Rise Time :

40ns

Terminal Position :

Single

Power Dissipation-Max :

40W Tc

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

JESD-30 Code :

R-PSFM-T3

Series :

SIPMOS®

Number of Elements :

1

Drain to Source Voltage (Vdss) :

200V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7A

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Published :

2005

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

7A

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Turn-Off Delay Time :

55 ns

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

30 ns

RoHS Status :

RoHS Compliant

Packaging :

Tube

DS Breakdown Voltage-Min :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.4Ohm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

40W

ECCN Code :

EAR99

FET Type :

N-Channel