BUZ73

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

200V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

5.8A

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Drain-source On Resistance-Max :

0.6Ohm

Published :

2000

Fall Time (Typ) :

30 ns

Rise Time :

40ns

Current Rating :

5.5A

Dual Supply Voltage :

200V

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

55 ns

Vgs (Max) :

±20V

Series :

SIPMOS®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Transistor Application :

SWITCHING

Nominal Vgs :

3 V

Termination :

Through Hole

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Lead Pitch :

2.54mm

Power Dissipation-Max :

40W Tc

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.5A, 10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Element Configuration :

Single

Voltage - Rated DC :

200V

FET Type :

N-Channel

Continuous Drain Current (ID) :

5.5A

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

22A

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Pins :

3

Power Dissipation :

40W

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1