BUZ323

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Infineon Technologies AG

Drain Current-Max (Abs) (ID) :

15 A

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Surface Mount :

No

Package :

Bulk

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Number of Terminals :

3

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

DS Breakdown Voltage-Min :

400 V

Pulsed Drain Current-Max (IDM) :

60 A

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.3 Ω

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

170 W

Transistor Application :

SWITCHING

Series :

-

Subcategory :

FET General Purpose Power

Avalanche Energy Rating (Eas) :

790 mJ

JEDEC-95 Code :

TO-218AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR