BUZ30AH3045A
- Mfr.Part #
- BUZ30AH3045A
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3
- Datasheet
- Download
- Description
- BUZ30 - 12V-300V N-CHANNEL POWER
- Stock
- 1,927
- In Stock :
- 1,927
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- SMD/SMT
- Reach Compliance Code :
- Compliant
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Height :
- 15.65 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900 pF @ 25 V
- Technology :
- Si
- Package / Case :
- TO-263-3
- Packaging :
- MouseReel
- Additional Feature :
- AVALANCHE RATED
- Maximum Operating Temperature :
- + 150 C
- Subcategory :
- MOSFETs
- Product Category :
- MOSFET
- Length :
- 10 mm
- Pin Count :
- 4
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.13 Ω
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max (Abs) :
- 125 W
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Product Status :
- Active
- Power Dissipation (Max) :
- 125W (Tc)
- Terminal Position :
- Single
- Tradename :
- SIPMOS
- Brand :
- Infineon Technologies
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- -
- Pbfree Code :
- yes
- Supplier Device Package :
- PG-TO263-3-2
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Continuous Drain Current Id :
- 21
- Configuration :
- Single
- Series :
- SIPMOS®
- Channel Type :
- N
- Number of Terminals :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 21A (Tc)
- DS Breakdown Voltage-Min :
- 200 V
- Case Connection :
- DRAIN
- Rise Time :
- 70 ns
- Manufacturer :
- Infineon
- Transistor Type :
- 1 N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-263AB
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 84 A
- ECCN Code :
- EAR99
- Package :
- Bulk
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 21 A
- Width :
- 4.4 mm
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 13.5A, 10V
- Drain to Source Voltage (Vdss) :
- 200 V
- Datasheets
- BUZ30AH3045A

Si N-Channel MouseReel 130mOhm @ 13.5A, 10V ±20V 1900 pF @ 25 V 200 V TO-263-3
BUZ30AH3045A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900 pF @ 25 V.There is no drain current on this device since the maximum continuous current it can conduct is 21 A.There is a peak drain current of 84 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200 V drain to source voltage (Vdss) in order to function.
BUZ30AH3045A Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 84 A.
a 200 V drain to source voltage (Vdss)
BUZ30AH3045A Applications
There are a lot of Infineon
BUZ30AH3045A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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