BUV21G
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- Mfr.Part #
- BUV21G
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN 200V 40A TO204
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 20
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 250W
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3A, 25A
- Number of Pins :
- 2
- Voltage - Rated DC :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Series :
- SWITCHMODE™
- Contact Plating :
- Copper, Silver, Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 3mA
- Max Power Dissipation :
- 250W
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 12A 2V
- Number of Terminations :
- 2
- Factory Lead Time :
- 2 Weeks
- Published :
- 2005
- Max Collector Current :
- 40A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 8MHz
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 200V
- Packaging :
- Tray
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Form :
- PIN/PEG
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 7V
- Transition Frequency :
- 8MHz
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 200V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-204AE
- Collector Base Voltage (VCBO) :
- 250V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Current Rating :
- 40A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 8MHz
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 2
- Datasheets
- BUV21G
NPN -65°C~200°C TJ 3mA 1 Elements 2 Terminations SILICON NPN TO-204AE Tray Through Hole
BUV21G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 12A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 3A, 25A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 40A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 8MHz.During maximum operation, collector current can be as low as 40A volts.
BUV21G Features
the DC current gain for this device is 20 @ 12A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3A, 25A
the emitter base voltage is kept at 7V
the current rating of this device is 40A
a transition frequency of 8MHz
BUV21G Applications
There are a lot of ON Semiconductor
BUV21G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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