BULT3P3

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Mfr.Part #
BULT3P3
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 200V 3A SOT32-3
Stock
42,180
In Stock :
42,180

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Packaging :
Tube
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Collector Current :
3A
Number of Pins :
3
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
100μA
Collector Emitter Breakdown Voltage :
200V
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 10mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
6V
Operating Temperature :
150°C TJ
Polarity/Channel Type :
PNP
Reach Compliance Code :
not_compliant
Pbfree Code :
yes
Pin Count :
3
Collector Emitter Voltage (VCEO) :
200V
Max Power Dissipation :
32W
ECCN Code :
EAR99
Base Part Number :
BULT3
Transistor Application :
SWITCHING
Element Configuration :
Single
Package / Case :
TO-225AA, TO-126-3
Power - Max :
32W
Number of Terminations :
3
JESD-609 Code :
e3
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULT3P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:BULT3, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, BULT3P3 pinout, BULT3P3 datasheet PDF, BULT3P3 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULT3P3 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULT3P3


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BULT3P3 Overview


In this device, the DC current gain is 10 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.

BULT3P3 Features


the DC current gain for this device is 10 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 6V


BULT3P3 Applications


There are a lot of STMicroelectronics
BULT3P3 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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