BULD742CT4
- Mfr.Part #
- BULD742CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A DPAK
- Stock
- 9,799
- In Stock :
- 9,799
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 400V
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 15V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 800mA 3V
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 250μA
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 45W
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 400V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Power Dissipation :
- 45W
- Max Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Base Part Number :
- BULD742
- Transistor Element Material :
- SILICON
- Datasheets
- BULD742CT4
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NPN 150°C TJ 250μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
BULD742CT4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 800mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 3.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 15V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 4A volts.
BULD742CT4 Features
the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
BULD742CT4 Applications
There are a lot of STMicroelectronics
BULD742CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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