BUK9K32-100EX
- Mfr.Part #
- BUK9K32-100EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1205, 8-LFPAK56
- Datasheet
- Download
- Description
- MOSFET 2N-CH 100V 26A 56LFPAK
- Stock
- 14,007
- In Stock :
- 14,007
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Package / Case :
- SOT-1205, 8-LFPAK56
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 23.1 ns
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 26A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 4
- Gate to Source Voltage (Vgs) :
- 15V
- Pin Count :
- 8
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Rds On (Max) @ Id, Vgs :
- 31m Ω @ 5A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 22ns
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Type :
- Surface Mount
- FET Feature :
- Logic Level Gate
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.033Ohm
- Reference Standard :
- AEC-Q101; IEC-60134
- Turn On Delay Time :
- 12.6 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 27.3nC @ 5V
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 106A
- JESD-30 Code :
- R-PSSO-G4
- Turn-Off Delay Time :
- 39.5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3168pF @ 25V
- Avalanche Energy Rating (Eas) :
- 74 mJ
- Number of Channels :
- 2
- Series :
- TrenchMOS™
- Drain to Source Breakdown Voltage :
- 100V
- FET Type :
- 2 N-Channel (Dual)
- Max Power Dissipation :
- 64W
- Number of Elements :
- 2
- Element Configuration :
- Dual
- Datasheets
- BUK9K32-100EX

BUK9K32-100EX datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available at
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