BUK9614-60E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Number of Terminations :

2

Contact Plating :

Tin

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

15V

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

16.9 ns

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

224A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2651pF @ 25V

Fall Time (Typ) :

22.9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 5V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Published :

2015

Rds On (Max) @ Id, Vgs :

12.8m Ω @ 15A, 10V

Max Dual Supply Voltage :

60V

Element Configuration :

Single

Case Connection :

DRAIN

Continuous Drain Current (ID) :

56A

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Surface Mount :

yes

Number of Channels :

1

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

60V

Rise Time :

22.4ns

JESD-30 Code :

R-PSSO-G2

Series :

Automotive, AEC-Q101, TrenchMOS™

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

35.7 ns

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Number of Pins :

3

Vgs (Max) :

±10V

Power Dissipation-Max :

96W Tc