BUK7675-55A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Series :

Automotive, AEC-Q101, TrenchMOS™

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2.9A

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

483pF @ 25V

Number of Elements :

1

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.075Ohm

Pin Count :

3

Element Configuration :

Single

Max Dual Supply Voltage :

55V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

10 ns

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

81A

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Number of Pins :

3

Power Dissipation-Max :

62W Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 1mA

HTS Code :

8541.29.00.75

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

FET Type :

N-Channel

Lead Free :

Lead Free

Fall Time (Typ) :

40 ns

Mounting Type :

Surface Mount

Power Dissipation :

62W

Rise Time :

50ns

Turn-Off Delay Time :

70 ns

Current - Continuous Drain (Id) @ 25°C :

20.3A Tc