BUK763R8-80E118

Manufacturer :

Nexperia

Product Category :

Specialized ICs

FET Type :

N-Channel

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

169nC @ 10V

Max Dual Supply Voltage :

80V

Series :

Automotive, AEC-Q101, TrenchMOS™

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn-Off Delay Time :

129 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Number of Pins :

3

Continuous Drain Current (ID) :

120A

Turn On Delay Time :

38 ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

786A

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

12030pF @ 25V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Contact Plating :

Tin

Terminal Form :

Gull wing

Rise Time :

48ns

Avalanche Energy Rating (Eas) :

488 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Power Dissipation :

357W

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Number of Elements :

1

Drain to Source Breakdown Voltage :

80V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Power Dissipation-Max :

357W Tc

Surface Mount :

yes

Fall Time (Typ) :

65 ns