BUK7635-55A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Rise Time :

62ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

49 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Mounting Type :

Surface Mount

Fall Time (Typ) :

20 ns

Factory Lead Time :

12 Weeks

Series :

Automotive, AEC-Q101, TrenchMOS™

Turn-Off Delay Time :

24 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Operating Temperature :

-55°C~175°C TJ

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

10 ns

Power Dissipation :

85W

Input Capacitance (Ciss) (Max) @ Vds :

872pF @ 25V

Published :

2011

JESD-609 Code :

e3

Number of Pins :

3

Element Configuration :

Single

Max Dual Supply Voltage :

55V

Continuous Drain Current (ID) :

35A

Case Connection :

DRAIN

Number of Elements :

1

Power Dissipation-Max :

85W Tc

Rds On (Max) @ Id, Vgs :

35m Ω @ 20A, 10V