BUK7613-60E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

60V

Transistor Application :

SWITCHING

Turn On Delay Time :

10.8 ns

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

9.8 ns

Contact Plating :

Tin

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 25V

Number of Channels :

1

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Rise Time :

9.2ns

Factory Lead Time :

12 Weeks

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

Automotive, AEC-Q101, TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

22.9nC @ 10V

Continuous Drain Current (ID) :

58A

FET Type :

N-Channel

Number of Terminations :

2

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Power Dissipation-Max :

96W Tc

Turn-Off Delay Time :

21.9 ns

RoHS Status :

ROHS3 Compliant