BUK7610-100B,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

FET Type :

N-Channel

Max Dual Supply Voltage :

100V

JESD-609 Code :

e3

Rise Time :

45ns

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

33 ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

629 mJ

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±20V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

36 ns

Factory Lead Time :

12 Weeks

Power Dissipation :

300W

Series :

Automotive, AEC-Q101, TrenchMOS™

Turn-Off Delay Time :

120 ns

Input Capacitance (Ciss) (Max) @ Vds :

6773pF @ 25V

Element Configuration :

Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Published :

2012

Drain Current-Max (Abs) (ID) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Contact Plating :

Tin

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

110A

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Pin Count :

3