BUK7608-40B,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power Dissipation-Max :

157W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

51 ns

Pulsed Drain Current-Max (IDM) :

407A

Max Dual Supply Voltage :

40V

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Power Dissipation :

157W

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs (Max) :

±20V

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Number of Terminations :

2

Turn On Delay Time :

20 ns

Element Configuration :

Single

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

ECCN Code :

EAR99

Continuous Drain Current (ID) :

101A

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.008Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2689pF @ 25V

Number of Elements :

1

Contact Plating :

Tin

Number of Pins :

3

Rise Time :

51ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

FET Type :

N-Channel

Fall Time (Typ) :

33 ns

Published :

2008