BUK7212-55B,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

JESD-609 Code :

e3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

83A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Factory Lead Time :

26 Weeks

FET Type :

N-Channel

Rise Time :

91ns

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

167W

Fall Time (Typ) :

45 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

167W Tc

Terminal Form :

Gull wing

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Element Configuration :

Single

Terminal Position :

Dual

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

12m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Turn-Off Delay Time :

48 ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

ECCN Code :

EAR99

Radiation Hardening :

No

Operating Temperature :

-55°C~185°C TJ

Drain Current-Max (Abs) (ID) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

2453pF @ 25V

Contact Plating :

Tin

Published :

2001

Max Dual Supply Voltage :

55V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

18 ns