BUK663R7-75C,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

120A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, TrenchMOS™

Drain to Source Breakdown Voltage :

75V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Fall Time (Typ) :

156 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain-source On Resistance-Max :

0.0058ohm

Turn On Delay Time :

52 ns

Number of Terminations :

2

Turn-Off Delay Time :

412 ns

Max Dual Supply Voltage :

75V

Number of Pins :

3

Case Connection :

DRAIN

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Power Dissipation :

306W

Rise Time :

81ns

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

234nC @ 10V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±16V

Gate to Source Voltage (Vgs) :

16V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

26 Weeks

Number of Elements :

1

Published :

2010

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

15450pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

306W Tc

Surface Mount :

yes

Pin Count :

3

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Radiation Hardening :

No