BUK6207-55C,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

55V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 25A, 10V

Number of Terminations :

2

Contact Plating :

Tin

Vgs (Max) :

±20V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Published :

2010

Factory Lead Time :

12 Weeks

Series :

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation :

128W

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation-Max :

158W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

78 ns

Rise Time :

44ns

Case Connection :

DRAIN

Terminal Form :

Gull wing

Pin Count :

3

Lead Free :

Lead Free

Continuous Drain Current (ID) :

90A

Element Configuration :

Single

Number of Pins :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn-Off Delay Time :

165 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

55V

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

5160pF @ 25V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Turn On Delay Time :

18 ns