BUK662R4-40C,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

199nC @ 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Power Dissipation :

263W

Number of Pins :

3

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Rise Time :

101ns

Terminal Form :

Gull wing

Published :

2007

Contact Plating :

Tin

Reach Compliance Code :

not_compliant

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

263W Tc

Max Dual Supply Voltage :

40V

Series :

Automotive, AEC-Q101, TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

11334pF @ 25V

Vgs (Max) :

±16V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

186 ns

Turn-Off Delay Time :

369 ns

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

120A

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

33.5 ns

Gate to Source Voltage (Vgs) :

16V

JESD-609 Code :

e3

Surface Mount :

yes