BUB941ZT
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- Mfr.Part #
- BUB941ZT
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 15A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- BUB941
- Continuous Collector Current :
- 15A
- Collector Emitter Voltage (VCEO) :
- 350V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Pin Count :
- 4
- JESD-30 Code :
- R-PSSO-G2
- Max Power Dissipation :
- 150W
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 175°C TJ
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 5A 10V
- Collector Emitter Saturation Voltage :
- 1.8V
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 300
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 350V
- Element Configuration :
- Single
- Max Collector Current :
- 15A
- Packaging :
- Tube
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Collector Base Voltage (VCBO) :
- 5V
- Power Dissipation :
- 150W
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Collector Cutoff (Max) :
- 100μA
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 250mA, 10A
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 245
- Datasheets
- BUB941ZT
NPN - Darlington 175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
BUB941ZT Overview
In this device, the DC current gain is 300 @ 5A 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 250mA, 10A.A 15A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
BUB941ZT Features
the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 250mA, 10A
the emitter base voltage is kept at 5V
BUB941ZT Applications
There are a lot of STMicroelectronics
BUB941ZT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUB941ZTT4 | STMicroelectronics | 51 | TRANS NPN DARL 350V 15A D2PAK |
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