BU508AW
- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock :
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 10
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 200μA
- Collector Emitter Voltage (VCEO) :
- 700V
- Height :
- 24.45mm
- Number of Elements :
- 1
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Number of Pins :
- 3
- Max Collector Current :
- 8A
- Pin Count :
- 3
- Base Part Number :
- BU508
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Max Power Dissipation :
- 125W
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Transistor Type :
- NPN
- Length :
- 15.75mm
- Collector Emitter Breakdown Voltage :
- 700V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 125W
- Lead Free :
- Lead Free
- Width :
- 5.15mm
- Package / Case :
- TO-247-3
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 9V
- Transistor Element Material :
- SILICON
- Datasheets
- BU508AW

NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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