BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Width :
- 5.15mm
- Package / Case :
- TO-247-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Power Dissipation :
- 125W
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 8A
- Collector Emitter Voltage (VCEO) :
- 700V
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 9V
- Max Junction Temperature (Tj) :
- 150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Packaging :
- Tube
- Base Part Number :
- BU508
- hFE Min :
- 10
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Breakdown Voltage :
- 700V
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 125W
- Radiation Hardening :
- No
- Height :
- 24.45mm
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Length :
- 15.75mm
- Current - Collector Cutoff (Max) :
- 200μA
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BU508AW
BU508AW Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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