BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Base Part Number :
- BU508
- Height :
- 24.45mm
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Max Junction Temperature (Tj) :
- 150°C
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 700V
- Max Power Dissipation :
- 125W
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Length :
- 15.75mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Packaging :
- Tube
- Power Dissipation :
- 125W
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 700V
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 8A
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 200μA
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Width :
- 5.15mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 9V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Datasheets
- BU508AW
BU508AW Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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