BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 15.75mm
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 24.45mm
- Package / Case :
- TO-247-3
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 200μA
- Base Part Number :
- BU508
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Pin Count :
- 3
- Width :
- 5.15mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 125W
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 125W
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Pins :
- 3
- Mount :
- Through Hole
- Element Configuration :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 8A
- Collector Emitter Voltage (VCEO) :
- 700V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Transistor Application :
- SWITCHING
- hFE Min :
- 10
- Collector Emitter Breakdown Voltage :
- 700V
- Number of Terminations :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Datasheets
- BU508AW
BU508AW Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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