BU508AW

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Mfr.Part #
BU508AW
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 700V 8A TO247-3
Stock
8,547
In Stock :
8,547

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
10
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
200μA
Collector Emitter Voltage (VCEO) :
700V
Height :
24.45mm
Number of Elements :
1
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 100mA 5V
Number of Pins :
3
Max Collector Current :
8A
Pin Count :
3
Base Part Number :
BU508
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Max Power Dissipation :
125W
Number of Terminations :
3
Collector Emitter Saturation Voltage :
1V
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Vce Saturation (Max) @ Ib, Ic :
1V @ 1.6A, 4.5A
Transistor Type :
NPN
Length :
15.75mm
Collector Emitter Breakdown Voltage :
700V
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mounting Type :
Through Hole
Mount :
Through Hole
Contact Plating :
Tin
Factory Lead Time :
8 Weeks
Power Dissipation :
125W
Lead Free :
Lead Free
Width :
5.15mm
Package / Case :
TO-247-3
Max Junction Temperature (Tj) :
150°C
Packaging :
Tube
Emitter Base Voltage (VEBO) :
9V
Transistor Element Material :
SILICON
Datasheets
BU508AW
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BU508AW from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:BU508, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, BU508AW pinout, BU508AW datasheet PDF, BU508AW amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BU508AW ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BU508AW


NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole

BU508AW Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.

BU508AW Features


the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V


BU508AW Applications


There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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