BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BU508
- Contact Plating :
- Tin
- Pin Count :
- 3
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Length :
- 15.75mm
- Height :
- 24.45mm
- Radiation Hardening :
- No
- Max Power Dissipation :
- 125W
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1V
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 9V
- Lead Free :
- Lead Free
- hFE Min :
- 10
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 125W
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 700V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Factory Lead Time :
- 8 Weeks
- Width :
- 5.15mm
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 700V
- Current - Collector Cutoff (Max) :
- 200μA
- Mounting Type :
- Through Hole
- Max Collector Current :
- 8A
- Max Junction Temperature (Tj) :
- 150°C
- Datasheets
- BU508AW
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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