BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Max Collector Current :
- 8A
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Length :
- 15.75mm
- Mount :
- Through Hole
- hFE Min :
- 10
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 200μA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Width :
- 5.15mm
- Max Power Dissipation :
- 125W
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- BU508
- Collector Emitter Voltage (VCEO) :
- 700V
- Max Junction Temperature (Tj) :
- 150°C
- Height :
- 24.45mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Power Dissipation :
- 125W
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3
- Collector Emitter Breakdown Voltage :
- 700V
- Datasheets
- BU508AW
BU508AW Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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