BU508AW

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Mfr.Part #
BU508AW
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 700V 8A TO247-3
Stock
8,547
In Stock :
8,547

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Contact Plating :
Tin
Emitter Base Voltage (VEBO) :
9V
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
200μA
Element Configuration :
Single
Max Power Dissipation :
125W
Packaging :
Tube
hFE Min :
10
Number of Elements :
1
Collector Emitter Saturation Voltage :
1V
Base Part Number :
BU508
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 100mA 5V
Height :
24.45mm
Mounting Type :
Through Hole
Factory Lead Time :
8 Weeks
Pin Count :
3
Operating Temperature :
150°C TJ
Transistor Type :
NPN
Power Dissipation :
125W
Max Collector Current :
8A
Collector Emitter Breakdown Voltage :
700V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Package / Case :
TO-247-3
JESD-609 Code :
e3
Mount :
Through Hole
Length :
15.75mm
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
700V
Width :
5.15mm
Max Junction Temperature (Tj) :
150°C
Polarity/Channel Type :
NPN
Number of Terminations :
3
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
1V @ 1.6A, 4.5A
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BU508AW from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BU508, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, BU508AW pinout, BU508AW datasheet PDF, BU508AW amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BU508AW ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BU508AW


NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole

BU508AW Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.

BU508AW Features


the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V


BU508AW Applications


There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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