BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Collector Current :
- 8A
- Contact Plating :
- Tin
- Power Dissipation :
- 125W
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Width :
- 5.15mm
- Collector Emitter Saturation Voltage :
- 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 700V
- Current - Collector Cutoff (Max) :
- 200μA
- Transistor Application :
- SWITCHING
- Max Junction Temperature (Tj) :
- 150°C
- Max Power Dissipation :
- 125W
- Mount :
- Through Hole
- Length :
- 15.75mm
- Radiation Hardening :
- No
- Height :
- 24.45mm
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- BU508
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- hFE Min :
- 10
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 9V
- Datasheets
- BU508AW
BU508AW Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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