BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 700V
- Emitter Base Voltage (VEBO) :
- 9V
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Application :
- SWITCHING
- Width :
- 5.15mm
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 15.75mm
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 125W
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Height :
- 24.45mm
- Max Junction Temperature (Tj) :
- 150°C
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 200μA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Collector Emitter Voltage (VCEO) :
- 700V
- Packaging :
- Tube
- Base Part Number :
- BU508
- REACH SVHC :
- No SVHC
- hFE Min :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 125W
- Max Collector Current :
- 8A
- Pin Count :
- 3
- Datasheets
- BU508AW
BU508AW Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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