BU508AF

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Mfr.Part #
BU508AF
Manufacturer
STMicroelectronics
Package / Case
ISOWATT218FX
Datasheet
Download
Description
TRANS NPN 700V 8A TO3PF
Stock
5,265
In Stock :
5,265

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
8 Weeks
Number of Pins :
3
Radiation Hardening :
No
Package / Case :
ISOWATT218FX
Operating Temperature :
150°C TJ
Max Power Dissipation :
50W
Collector Base Voltage (VCBO) :
9V
Pin Count :
3
Max Collector Current :
8A
Transistor Application :
SWITCHING
Packaging :
Tube
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
1V @ 1.6A, 4.5A
Emitter Base Voltage (VEBO) :
9V
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 100mA 5V
Transistor Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Collector Emitter Breakdown Voltage :
700V
Transistor Element Material :
SILICON
Base Part Number :
BU508
Contact Plating :
Tin
Element Configuration :
Single
JESD-609 Code :
e3
Number of Elements :
1
Current - Collector Cutoff (Max) :
200μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Power Dissipation :
50W
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
700V
Case Connection :
Isolated
Polarity/Channel Type :
NPN
Datasheets
BU508AF
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BU508AF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:ISOWATT218FX, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:BU508, Number of Terminations:3, BU508AF pinout, BU508AF datasheet PDF, BU508AF amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BU508AF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BU508AF


NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole

BU508AF Overview


In this device, the DC current gain is 10 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.

BU508AF Features


the DC current gain for this device is 10 @ 100mA 5V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V


BU508AF Applications


There are a lot of STMicroelectronics
BU508AF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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