BU508AF
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- Mfr.Part #
- BU508AF
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO3PF
- Stock
- 5,265
- In Stock ：
- 5,265
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Package / Case :
- ISOWATT218FX
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 9V
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 50W
- Collector Emitter Voltage (VCEO) :
- 700V
- Max Collector Current :
- 8A
- Number of Elements :
- 1
- Power Dissipation :
- 50W
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Base Part Number :
- BU508
- Current - Collector Cutoff (Max) :
- 200μA
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 700V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BU508AF
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
BU508AF Overview
In this device, the DC current gain is 10 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.
BU508AF Features
the DC current gain for this device is 10 @ 100mA 5V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AF Applications
There are a lot of STMicroelectronics
BU508AF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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