BU508AF
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- Mfr.Part #
- BU508AF
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO3PF
- Stock
- 5,265
- In Stock ：
- 5,265
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Base Part Number :
- BU508
- Package / Case :
- ISOWATT218FX
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 9V
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Case Connection :
- Isolated
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 700V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 8A
- Emitter Base Voltage (VEBO) :
- 9V
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 700V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 200μA
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Max Power Dissipation :
- 50W
- Mount :
- Through Hole
- Power Dissipation :
- 50W
- Number of Pins :
- 3
- Datasheets
- BU508AF
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
BU508AF Overview
In this device, the DC current gain is 10 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.
BU508AF Features
the DC current gain for this device is 10 @ 100mA 5V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AF Applications
There are a lot of STMicroelectronics
BU508AF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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