BU508A
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- Mfr.Part #
- BU508A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 13,289
- In Stock ：
- 13,289
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- hFE Min :
- 10
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 9V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 700V
- Height :
- 24.45mm
- Number of Elements :
- 1
- Max Power Dissipation :
- 125W
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Package / Case :
- TO-247-3
- Power Dissipation :
- 125W
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 700V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Length :
- 15.75mm
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 8A
- JESD-609 Code :
- e3
- Width :
- 5.15mm
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 200μA
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Pin Count :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BU508
- Datasheets
- BU508A
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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