BSS64LT1G
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- Mfr.Part #
- BSS64LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.1A SOT23-3
- Stock
- 721
- In Stock ：
- 721
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Voltage - Rated DC :
- 80V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 225mW
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 15mA, 50mA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- yes
- Transition Frequency :
- 60MHz
- hFE Min :
- 20
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BSS64
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Height :
- 1.01mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 1V
- Factory Lead Time :
- 2 Weeks
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Current Rating :
- 100mA
- Frequency :
- 60MHz
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 60MHz
- Collector Emitter Saturation Voltage :
- 200mV
- Width :
- 1.4mm
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 3.04mm
- Collector Base Voltage (VCBO) :
- 120V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BSS64LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS64LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 10mA 1V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 15mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 60MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BSS64LT1G Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BSS64LT1G Applications
There are a lot of ON Semiconductor
BSS64LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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