BSS64LT1
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- Mfr.Part #
- BSS64LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.1A SOT23-3
- Stock
- 2,377
- In Stock ：
- 2,377
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 20
- Lead Free :
- Lead Free
- Current Rating :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 1V
- Transition Frequency :
- 60MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 200mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 15mA, 50mA
- Pin Count :
- 3
- Height :
- 1.01mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 60MHz
- Collector Base Voltage (VCBO) :
- 120V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2006
- Transistor Type :
- NPN
- Frequency :
- 60MHz
- Width :
- 1.4mm
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 80V
- Base Part Number :
- BSS64
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Length :
- 3.04mm
- Max Power Dissipation :
- 225mW
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Datasheets
- BSS64LT1
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS64LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 10mA 1V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 15mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 60MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BSS64LT1G Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BSS64LT1G Applications
There are a lot of ON Semiconductor
BSS64LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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