BSR33TA
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- Mfr.Part #
- BSR33TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89-3
- Stock
- 19,555
- In Stock ：
- 19,555
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- -500mV
- Qualification Status :
- Not Qualified
- Terminal Form :
- Flat
- Voltage - Rated DC :
- -80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.5mm
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1W
- Width :
- 2.5mm
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Package / Case :
- TO-243AA
- Termination :
- SMD/SMT
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- JESD-30 Code :
- R-PSSO-F3
- Base Part Number :
- BSR33
- Number of Pins :
- 4
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Factory Lead Time :
- 14 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1W
- Current Rating :
- -1A
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- hFE Min :
- 50
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 90V
- Frequency :
- 100MHz
- Continuous Collector Current :
- -1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- Length :
- 4.5mm
- Weight :
- 51.993025mg
- Pbfree Code :
- No
- Transistor Type :
- PNP
- Datasheets
- BSR33TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BSR33TA Overview
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BSR33TA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
BSR33TA Applications
There are a lot of Diodes Incorporated
BSR33TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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