BSP324 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

SIPMOS®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

1.8W Ta

Pulsed Drain Current-Max (IDM) :

0.68A

Rds On (Max) @ Id, Vgs :

25 Ω @ 170mA, 10V

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

4

DS Breakdown Voltage-Min :

400V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

0.17A

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Case Connection :

DRAIN

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Published :

2007

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

154pF @ 25V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.3V @ 94µA

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Pin Count :

4

Drain to Source Voltage (Vdss) :

400V

Operating Mode :

ENHANCEMENT MODE