BSP315P-E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

FET Type :

P-Channel

Continuous Drain Current (ID) :

1.17A

Mount :

Surface Mount

Series :

SIPMOS®

Supplier Device Package :

PG-SOT223-4

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 160μA

Input Capacitance :

160pF

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

1.17A Ta

Power Dissipation :

1.8W

Lead Free :

Contains Lead

Number of Elements :

1

Rds On Max :

800 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Voltage - Rated DC :

-60V

Package / Case :

TO-261-4, TO-261AA

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Current Rating :

-1.17A

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.8W Ta

Rds On (Max) @ Id, Vgs :

800mOhm @ 1.17A, 10V

Drain to Source Voltage (Vdss) :

60V

Max Operating Temperature :

150°C

Number of Pins :

4