BSP315

Manufacturer :

Siemens

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

4A

Terminal Position :

Dual

DS Breakdown Voltage-Min :

50V

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

Configuration :

Single

Power Dissipation-Max :

1.8W

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

1A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C

Number of Terminations :

4

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

50V

Current - Continuous Drain (Id) @ 25°C :

1A

Number of Elements :

1

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

0.8 Ω