BSP298 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

2A

Series :

SIPMOS®

Peak Reflow Temperature (Cel) :

255

Drain-source On Resistance-Max :

3Ohm

Terminal Position :

Dual

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Number of Terminations :

4

Case Connection :

DRAIN

HTS Code :

8541.29.00.95

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

130 mJ

Pin Count :

4

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

400V

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Drain Current-Max (Abs) (ID) :

0.5A

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.8W Ta

Published :

2007

Package / Case :

TO-261-4, TO-261AA

DS Breakdown Voltage-Min :

400V