BSP225,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

-225mA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Vgs (Max) :

±20V

Number of Elements :

1

Pin Count :

4

Power Dissipation :

1.5W

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

15 Ω @ 200mA, 10V

Feedback Cap-Max (Crss) :

15 pF

DS Breakdown Voltage-Min :

250V

Number of Terminations :

4

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Published :

1998

Surface Mount :

yes

Package / Case :

TO-261-4, TO-261AA

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

225mA Ta

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

JESD-609 Code :

e3

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.225A

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

250V

Transistor Element Material :

SILICON