BSD235CH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.35Ohm

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

0.95A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

HTS Code :

8541.21.00.95

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

350m Ω @ 950mA, 4.5V

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

6

Package / Case :

6-VSSOP, SC-88, SOT-363

Current - Continuous Drain (Id) @ 25°C :

950mA 530mA

Operating Temperature :

-55°C~150°C TJ

Reference Standard :

AEC-Q101

Input Capacitance (Ciss) (Max) @ Vds :

47pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

1.2V @ 1.6μA

Continuous Drain Current (ID) :

530mA

JESD-609 Code :

e3

Published :

2012

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

REACH SVHC :

No SVHC

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Base Part Number :

BSD235

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Lead Free :

Lead Free

Max Power Dissipation :

500mW

Gate to Source Voltage (Vgs) :

12V

Max Dual Supply Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

0.34nC @ 4.5V

RoHS Status :

ROHS3 Compliant