BSC889N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Published :

2011

Number of Pins :

8

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

7.7 ns

Fall Time (Typ) :

5 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 30A, 10V

FET Type :

N-Channel

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

4.2ns

Current - Continuous Drain (Id) @ 25°C :

12A Ta 44A Tc

Number of Elements :

1

Turn-Off Delay Time :

7.2 ns

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Series :

OptiMOS™

JESD-30 Code :

R-PDSO-N5

Vgs (Max) :

±20V

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Power Dissipation-Max :

2.5W Ta 28W Tc

Continuous Drain Current (ID) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99