BSC882N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

34V

Transistor Element Material :

SILICON

Published :

2010

Turn On Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

22A Ta 100A Tc

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 15V

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

75 mJ

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.5W Ta 69W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Number of Pins :

8

Continuous Drain Current (ID) :

22A

Pulsed Drain Current-Max (IDM) :

400A

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Turn-Off Delay Time :

24 ns

Rise Time :

9ns

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 30A, 10V

Terminal Form :

Flat

Power Dissipation :

2.5W

Drain-source On Resistance-Max :

0.0033Ohm

Vgs (Max) :

±20V

Fall Time (Typ) :

9.4 ns

DS Breakdown Voltage-Min :

34V