BSC889N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

12

Power Dissipation :

2.5 W

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

-

Continuous Drain Current (ID) :

280 mA

Reach Compliance Code :

Compliant

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

10 mJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

7.2 ns

Product Status :

Active

Package :

Bulk

Supplier Device Package :

PG-TSDSON-8

Drain Current-Max (Abs) (ID) :

44 A

Max Power Dissipation :

500 mW

Drain to Source Breakdown Voltage :

30 V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Mount :

Surface Mount

Min Operating Temperature :

-55 °C

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20 V

Number of Elements :

1

Drain to Source Resistance :

9.1 mΩ

Manufacturer :

Infineon Technologies AG

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Surface Mount :

yes

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

NO LEAD

Power Dissipation-Max (Abs) :

28 W

Technology :

MOSFET (Metal Oxide)

FET Type :

N-Channel

Number of Terminals :

5

Number of Pins :

8

Power Dissipation (Max) :

2.5W (Ta), 28W (Tc)

Drain-source On Resistance-Max :

0.0091 Ω

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

ECCN Code :

EAR99

Input Capacitance :

43 pF

DS Breakdown Voltage-Min :

30 V

Channel Type :

N

JESD-30 Code :

R-PDSO-N5

Pin Count :

8

RoHS :

Compliant

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Mounting Type :

Surface Mount

Rds On Max :

3.5 Ω

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 15 V

Rise Time :

4.2 ns

Pulsed Drain Current-Max (IDM) :

176 A

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Max Operating Temperature :

150 °C

Current - Continuous Drain (Id) @ 25°C :

12A (Ta), 44A (Tc)

Subcategory :

FET General Purpose Power

Drain to Source Voltage (Vdss) :

60 V

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 30A, 10V

Series :

OptiMOS™ 3