BSC152N10NSFG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™2

Terminal Position :

Dual

Power Dissipation (Max) :

114W (Tc)

Transistor Application :

SWITCHING

Number of Terminals :

5

Number of Elements :

1

Subcategory :

FET General Purpose Power

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

15.2mOhm @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

29 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1900 pF @ 50 V

Qualification Status :

Not Qualified

Terminal Form :

Flat

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

100 V

Manufacturer :

Infineon Technologies AG

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

114 W

Drain-source On Resistance-Max :

0.0152 Ω

JESD-609 Code :

e3

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 72µA

DS Breakdown Voltage-Min :

100 V

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Current - Continuous Drain (Id) @ 25°C :

9.4A (Ta), 63A (Tc)

Continuous Drain Current Id :

9.4

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-Channel

Channel Type :

N

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

252 A

Technology :

MOSFET (Metal Oxide)

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

Supplier Device Package :

PG-TDSON-8

Surface Mount :

yes

Pbfree Code :

yes

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain Current-Max (Abs) (ID) :

63 A

Avalanche Energy Rating (Eas) :

155 mJ

Product Status :

Active

FET Feature :

-

Reach Compliance Code :

Unknown