BSC100N06LS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

60V

Number of Terminations :

5

Turn On Delay Time :

8 ns

Halogen Free :

Halogen Free

Number of Pins :

8

Mounting Type :

Surface Mount

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

Factory Lead Time :

13 Weeks

Avalanche Energy Rating (Eas) :

22 mJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

12A

Terminal Form :

Flat

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Mount :

Surface Mount

Turn-Off Delay Time :

19 ns

Reach Compliance Code :

not_compliant

Published :

2011

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

200A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

2.2V @ 23μA

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta 50W Tc

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 30V

JESD-30 Code :

R-PDSO-F5

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

12A Ta 50A Tc

Transistor Element Material :

SILICON

Rise Time :

58ns