BSC13DN30NSFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

300V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

64A

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

16A

Surface Mount :

yes

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

130m Ω @ 16A, 10V

Terminal Form :

Flat

Series :

OptiMOS™

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 150V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.13Ohm

Power Dissipation-Max :

150W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

JESD-609 Code :

e3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Factory Lead Time :

26 Weeks

Drain to Source Voltage (Vdss) :

300V

Avalanche Energy Rating (Eas) :

56 mJ

Vgs (Max) :

±20V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-F5

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Vgs(th) (Max) @ Id :

4V @ 90µA

Published :

2013